Coating apparatus – Gas or vapor deposition – With treating means
Patent
1988-03-25
1990-06-05
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
C23C 1650
Patent
active
049304429
ABSTRACT:
An improved microwave plasma CVD apparatus for the formation of a thin film on a substrate by exciting glow discharge in a reaction chamber, comprising a substantially enclosed reaction chamber to receive the substrate, a means for supplying a film forming raw material gas into said reaction chamber and a means for introducing microwave energy into said reaction chamber, characterized in that said means for introducing microwave energy retains the gas atmosphere in said reaction chamber and as well as is constituted by a microwave transmissive material capable of introducing the microwave energy, said material being alumina ceramics containing glassy component such as SiO.sub.2, CaO and MgO in an amount of 1 wt. % to 10 wt. % and substantially as other component .alpha.-alumina.
In the improved apparatus, the microwave transmissive window can be repeatedly used without being damaged for a long period of time and a desirable functional deposited film may be mass-produced at a high deposition rate.
REFERENCES:
patent: 4609428 (1986-09-01), Fujimura
patent: 4720471 (1988-01-01), Ando
patent: 4729341 (1988-03-01), Fournier
patent: 4735926 (1988-04-01), Ando
Arai Takayoshi
Hashizume Junichiro
Iida Shigehira
Saitoh Keishi
Takei Tetsuya
Bueker Richard
Canon Kabushiki Kaisha
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