Microwave plasma CVD apparatus for the formation of functional d

Details Microwave plasma CVD apparatus for the formation of functional d Microwave plasma CVD apparatus for the formation of functional d

1990-07-09

1992-07-14

Beck, Shrive

Coating apparatus

Gas or vapor deposition

With treating means

118730, 427 39, 427 451, C23C 1650

Patent

active

051293595

ABSTRACT:
A microwave plasma CVD apparatus for the formation of a functional deposited film includes a gas supply pipe to which a bias voltage is applied so as to form an electric field between the gas supply pipe and a substrate onto which the film is deposited.

REFERENCES:
patent: 4840139 (1989-06-01), Takei
patent: 4897281 (1990-01-01), Arai et al.
patent: 4897284 (1990-01-01), Arai et al.
patent: 4953498 (1990-09-01), Hashizume et al.

Affiliated with

Also associated with

Rating

Microwave plasma CVD apparatus for the formation of functional d does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Microwave plasma CVD apparatus for the formation of functional d, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microwave plasma CVD apparatus for the formation of functional d will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-329207