Microwave plasma apparatus employing helmholtz coils and ioffe b

Details Microwave plasma apparatus employing helmholtz coils and ioffe b Microwave plasma apparatus employing helmholtz coils and ioffe b

1988-04-26

1990-05-22

Morgenstern, Norman

Coating apparatus

Gas or vapor deposition

With treating means

427 39, 427 451, 118715, 156345, C23C 1600

Patent

active

049267914

ABSTRACT:
A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz coils, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber.

REFERENCES:
patent: 4125431 (1978-11-01), Fowler
patent: 4727293 (1988-02-01), Asmussen et al.
"ECR Type Ion Source", Proc. 10th Symp. on ISIAT '86. (Tokyo 1986), pp. 117-120 by M. Tamba, Y. Ishibe and Y. Sakamoto.
"An Optimum Condition of Multipole Field for an ECR-Type Ion Source", Jap. Journal of Appl. Phys., vol. 25, No. 9, Sep. 1986 by Ishii et al., pp. L712-L715.
"Suppression of Noise in a Discharge Tube by a Minimum-B Type Magnet", Jap. Journal of Appl. Phys., vol. 27, No. 2, Feb. 1988, by Hiroshi Amemiya, pp. 297-301.

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