Microwave monolithic spot FET switch configuration

Details Microwave monolithic spot FET switch configuration Microwave monolithic spot FET switch configuration

1982-06-03

1985-12-03

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307241, 307244, 307262, 333164, 333262, H03K 17687, H03K 1756, H01P 110

Patent

active

045568081

ABSTRACT:
A single-pole-double-throw microwave monolithic switch is realized by employing shunt connected field effect transistors interconnected with microstrip transmission lines on a gallium arsenide substrate. A low-pass network, configured with quasi-lumped elements, is used to achieve a 90.degree. phase shift between the transistors and the input point. The FET gate width is selected to yield the appropriate source-drain capacitance, which forms one element of the low-pass network comprising the respective switch output path. Use of this inventive structure yields the bandwidth offered by the conventional shunt switch and the small size achievable in the series switch configuration.

REFERENCES:
patent: 3146357 (1964-08-01), Spallone
patent: 3602738 (1971-08-01), Bohm
patent: 4395687 (1983-07-01), Belohoubek
patent: 4425633 (1984-01-01), Swain
patent: 4471330 (1984-09-01), Naster et al.

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