Microwave monolithic integrated circuit (MMIC) including distrib

Details Microwave monolithic integrated circuit (MMIC) including distrib Microwave monolithic integrated circuit (MMIC) including distrib

1992-02-28

1993-12-28

Pascal, Robert J.

Amplifiers

With semiconductor amplifying device

Including plural amplifier channels

330311, 330124R, H03F 368

Patent

active

052743420

ABSTRACT:
A microwave monolithic integrated circuit (MMIC) (40), includes a substrate (60), and an input bus (62), output bus (64), ground bus (66) and bias bus (68) formed as striplines of a four-line coplanar waveguide on the substrate (60) with the input bus (62) and output bus (64) disposed between the ground bus (66) and bias bus (68). A plurality of spatially distributed cascode amplifier units (43) are formed on the substrate (60), each including an input heterojunction bipolar transistor (HBT) (42) connected in a common-emitter configuration, and an output HBT (44) connected in a common-base configuration. The input HBT (42) has an emitter (E.sub.1) connected to the ground bus (66), a base (B.sub.1) connected to the input bus (62) and a collector (C.sub.1). The output HBT (44) has an emitter (E.sub.2) connected to the collector (C.sub.1) of the input HBT (42), a base (B.sub.2) connected to the bias bus (68) and a collector (C.sub.2) connected to the output bus (64). The distributed amplifier arrangement enables the HBTs (42,44) to operate with balanced electrical parameters and high thermal isolation and heat dissipation.

REFERENCES:
patent: 3443238 (1969-05-01), Fynn et al.
patent: 4250463 (1981-02-01), Foster
patent: 5066926 (1991-11-01), Ramachadran et al.
GaAs Heterojunction Bipolar Transistors: A Second Generation Microwave Power Amplifier Transistor, J. A. Higgins, Microwave Journal, May 1991.

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