Microwave method of making semiconductor members

Details Microwave method of making semiconductor members Microwave method of making semiconductor members

1985-05-15

1986-10-28

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

427 39, 427 74, 156613, C30B 2502

Patent

active

046197290

ABSTRACT:
A process and system for making semiconductor alloys and members with high reaction gas conversion efficiencies and at high deposition rates utilizes microwave energy to form a deposition plasma. The microwave energy forms depositing species and molecular ions of a semiconductor element and the potential of the plasma is controlled to alter the ion bombardment of the depositing species.
The process and system include coupling microwave energy into a substantially enclosed reaction vessel containing a substrate and depositing semiconductor alloys onto the substrate from a reaction gas introduced into the vessel. The semiconductor alloys are particularly suited for relatively thick photoconductive members. The photoconductive member includes at least a bottom blocking layer and a photoconductive layer. The photoconductive member can be formed in a negative or positive charge type configuration. The members also can include a top blocking enhancement layer.

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McGraw-Hill Dictionary of Scientific and Technical Terms, 3rd Ed. N.Y., 1983.

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