Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1995-07-21
1997-03-25
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257275, 257728, 233246, 233247, H01L 2980, H01L 31112, H01P 308, H01P 100
Patent
active
056147430
ABSTRACT:
MMIC elements are formed on the surface of a GaAs semiconductor substrate. Rectangular U grooves having V-shaped bottoms are formed on the bottom surface of the substrate up to the surface of the substrate under the electrode and ground terminals of the MMIC elements. MIM capacitors and coils are formed on the side walls of the grooves and the bottom surface of the substrate and are connected to the electrode and ground terminals. This arrangement provides the MIM capacitors with large capacitance and the coils with large inductance without increasing chip size.
REFERENCES:
patent: 5351163 (1994-09-01), Dawson et al.
Jr. Carl Whitehead
Kabushiki Kaisha Toshiba
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