Microwave heterojunction bipolar transistors with emitters desig

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257191, H01L 310328

Patent

active

06025615&

ABSTRACT:
In one form of the invention, an emitter structure for a bipolar transistor is disclosed. The structure is comprised of an emitter layer 6 of Al.sub.x Ga.sub.1-x As, where x>0.4, abutting a base layer 8.

REFERENCES:
patent: 4617724 (1986-10-01), Yokoyama et al.
patent: 4728616 (1988-03-01), Ankri et al.
patent: 4751195 (1988-06-01), Kawgi
patent: 4924283 (1990-05-01), Ohshima
patent: 4965650 (1990-10-01), Inada et al.
patent: 4996166 (1991-02-01), Ohshima
patent: 5212103 (1993-05-01), Shimura
patent: 5289020 (1994-02-01), Hirose et al.
patent: 5401999 (1995-03-01), Bayraktaroglu
Guan-bo Gao, et al., "Emitter Ballasting Resistor Design for and Current Handling Capability of AlGaAs/GaAs Power Heterojunction Bipolar Transistors,", IEEE Transactions on Electron Devices, vol. 38, No. 2, pp. 185-196, Feb. 1991.
Richard H. Winkler, "Thermal Properties of High-Power Transistors," IEEE Transactions on Electron Devices, vol. ED-14, No. 5, pp. 260-263, May 1967.
Robert P. Arnold, et al., "A quantitative Study of Emitter Ballasting", IEEE Transactions on Electron Devices, vol. ED-21, No. 7, pp. 385-391, Jul. 1974.
S. M. Sze, Physics of Semiconductor Devices, Second Edition, pp. 169-175.
P. Launay, B. Bamueni, A. Duchenois, P. Blanconnier, "Self-Aligned AlGaAs/GaAs HBT's with Tungsten N and P Type Ohmic Contacts", Microelectronic Engineering, vol. 15, No. 1/4, Oct. 1991, pp. 161-164.
A. Lahav and M. Genut, "Study of Tungsten and WSi Refractory Ohmic Contacts to Graded-Gap InGaAs/GaAs/AlGaAs Heterostructures", Materials Science and Engineering, vol. B7, No. 3, Dec. 1990, pp. 231-235.
"500mA AlGaAs/GaAs Power Heterojunction Bipolar Transistor," Electronics Letters, vol. 25, No. 21, pp. 1447-1448, Oct. 12, 1989.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Microwave heterojunction bipolar transistors with emitters desig does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Microwave heterojunction bipolar transistors with emitters desig, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microwave heterojunction bipolar transistors with emitters desig will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1907823

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.