Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2011-08-09
2011-08-09
Geyer, Scott B (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S931000, C117S084000
Reexamination Certificate
active
07994027
ABSTRACT:
The present invention grows nanostructures using a microwave heating-based sublimation-sandwich SiC polytype growth method comprising: creating a sandwich cell by placing a source wafer parallel to a substrate wafer, leaving a small gap between the source wafer and the substrate wafer; placing a microwave heating head around the sandwich cell to selectively heat the source wafer to a source wafer temperature and the substrate wafer to a substrate wafer temperature; creating a temperature gradient between the source wafer temperature and the substrate wafer temperature; sublimating Si- and C-containing species from the source wafer, producing Si- and C-containing vapor species; converting the Si- and C-containing vapor species into liquid metallic alloy nanodroplets by allowing the metalized substrate wafer to absorb the Si- and C-containing vapor species; and growing nanostructures on the substrate wafer once the alloy droplets reach a saturation point for SiC. The substrate wafer may be coated with a thin metallic film, metal nanoparticles, and/or a catalyst.
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Davydov Albert V.
Mulpuri Rao V.
Sundaresan Siddharth G.
Tian Yonglai
George Mason Intellectual Properties, Inc.
Geyer Scott B
Grossman David
NIST
Yee David
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