Microwave excitation plasma processing apparatus and microwave e

Details Microwave excitation plasma processing apparatus and microwave e Microwave excitation plasma processing apparatus and microwave e

1998-01-13

1999-09-21

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

156345, 216 69, H01L 2100

Patent

active

059553820

ABSTRACT:
A microwave excitation plasma processing apparatus comprises a vacuum container having a plasma generating chamber at an upper portion thereof and a processing chamber, a gas supply pipe for supplying a process gas into the plasma generating chamber, a dielectric window arranged in an opening of an upper wall portion of the vacuum container, a rectangular waveguide arranged on the upper wall portion of the vacuum container including the dielectric window and comprising a first wall having a first surface perpendicular to a direction of electric field of a microwave to oppose the dielectric window, second walls having second surfaces parallel to the direction of electric field of the microwave and extending in a direction perpendicular to the first surface, and a third wall having a third surface which is provided on a side opposite to a microwave introducing side perpendicular to the first and second surfaces to reflect the microwave, and a microwave oscillator for introducing the microwave into the waveguide, wherein the waveguide has two slits which are formed in the first wall and located in the vicinity of the second walls, and which extend in parallel or substantially parallel to the second walls, each of the slits having a width which is smaller on a side closer to the third surface.

REFERENCES:
patent: 5364519 (1994-11-01), Fujimura et al.
patent: 5478403 (1995-12-01), Shinagawa et al.
patent: 5556475 (1996-09-01), Besen et al.

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