Microwave energized ion source for ion implantation

Details Microwave energized ion source for ion implantation Microwave energized ion source for ion implantation

1994-09-26

1996-06-04

Pascal, Robert

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Plasma generating

31511181, 3133631, H01J 724

Patent

active

055236529

ABSTRACT:
A microwave energized ion source apparatus is supported by a support tube extending into a cavity defined by a housing assembly and includes a dielectric plasma chamber, a pair of vaporizers, a microwave tuning and transmission assembly and a magnetic field generating assembly. The chamber defines an interior region into which source material and ionizable gas are routed. The chamber is overlied by a cap having an arc slit through which generated ions exit the chamber. The microwave tuning and transmission assembly, which feeds microwave energy to the chamber in the TEM mode, includes a coaxial microwave energy transmission line center conductor. One end of the conductor fits into a recessed portion of the chamber and transmits microwave energy to the chamber. The center conductor extends through an evacuated portion of a coaxial tube surrounding the conductor. A vacuum seal is disposed in or adjacent the coaxial tube and from the boundary between the evacuated coaxial tube and a non-evacuated region. The arc slit cap is secured to a chamber housing surrounding the chamber and is adapted to interfit with a clamping assembly secured to an end of the support tube such that the arc slit is aligned with a predetermined ion beam line. The energy transmission center conductor is coupled to a tuning center conductor which is slideably overlied by a pair of slug tuners. Moving the slug tuners along their paths of travel changes an impedance of the microwave energy input to the chamber.

REFERENCES:
patent: 4714834 (1987-12-01), Shubaly
patent: 4780642 (1988-10-01), Jacquot
patent: 4883968 (1989-11-01), Hipple et al.
patent: 5026997 (1991-06-01), Benveniste
patent: 5032202 (1991-07-01), Tsai et al.
Hutchinson, I. H., Principles of Plasma Diagnostics, Cambridge University Press, Contents, pp. vii-xi (1987).
Root, J., et al., "Experimental Performance of a Microwave Cavity Plasma Disk Ion Source," Review of Scientific Instruments, vol. 56, No. 8, pp. 1511-1519 (Aug. 1985).
Sakudo, N., "Microwave Ion Source for Ion Implantation," Nuclear Instruments and Methods in Physics Research, B21, pp. 168-177 (1987).

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