Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2005-06-14
2005-06-14
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S456000, C228S180220
Reexamination Certificate
active
06905945
ABSTRACT:
Bonding of MEMs materials is carried out using microwave. High microwave absorbing films are placed within a microwave cavity, and excited to cause selective heating in the skin of the material. This causes heating in one place more than another. Thereby minimizing the effects of the bonding microwave energy.
REFERENCES:
patent: 5172852 (1992-12-01), Bernardoni et al.
patent: 5346857 (1994-09-01), Scharr et al.
patent: 5603795 (1997-02-01), Paulauskas et al.
patent: 5846854 (1998-12-01), Giraud et al.
patent: 5985693 (1999-11-01), Leedy
patent: 6054693 (2000-04-01), Barmatz et al.
patent: 6312548 (2001-11-01), Fathi et al.
patent: 11121531 (1999-04-01), None
Barmatz Martin B.
Budraa Nasser K.
Jackson Henry W.
Mai John D.
Pike William T.
California Institute of Technology
Dolan Jennifer M
Fish & Richardson P.C.
LandOfFree
Microwave bonding of MEMS component does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Microwave bonding of MEMS component, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microwave bonding of MEMS component will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3521773