Microwave annealing

Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate

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4273762, 4273766, 4273977, 4274197, 427559, 427569, 427240, 4272481, 438664, 438683, B05D 306, B05D 300, H01L 2144

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060512830

ABSTRACT:
The present invention is directed to a method of forming a new material layer or region near an interface region of two dissimilar materials, and an optional third layer, wherein at least one of said dissimilar materials or optional third is capable of being heated by microwave energy. The method of the present invention includes a step of irradiating a structure containing at least two dissimilar materials and an optional third layer under conditions effective to form the new material layer in the structure. An apparatus for conducting the microwave heating as well as the structures formed from the method are also described herein.

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T. Shibata, et al., "Metal Silicon Reactions Induced by CW Scanned Laser and Electron Beams", J. Electrochem. Soc.: Solid-State Science and Technology, 128:3, pp. 637-644 (1981).
G. Bomchil, et al., "Formation Kinetics of MoSi.sub.2 Induced By CW Scanned Laser Beam", Appl. Phys Lett. 41:1, pp. 46-48 (1982).
I. Ursu, et al., "Titanium Silicide Synthesis as an Effect of CW CO.sub.2 -Laser Irradiation", J. Appl. Phys., 66:11, pp. 5635-5636 (1989).

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