Etching a substrate: processes – Etching of semiconductor material to produce an article...
Patent
1994-04-21
1995-08-15
Powell, William
Etching a substrate: processes
Etching of semiconductor material to produce an article...
216 17, 216 79, 216 99, H01L 21306, B44C 122, C23F 100
Patent
active
054415977
ABSTRACT:
A process for fabricating a flow control device which includes a housing with separate main flow and flow control (servo) passages between an inlet port and an exit port. A control chamber in the housing is in fluid communication with the servo passage. A flexible membrane forms a partition between the main flow passage and the control chamber. The servo passage includes a variable servo orifice upstream of the control chamber and a fixed orifice downstream of the chamber. When the servo valve is open to permit passage of fluid into the control chamber, the resultant pressure on the membrane maintains the main valve closed. The main valve opens in response to closing the servo valve. The fixed orifice has a profile sufficiently small to provide for an acceptable leak or continuous fluid flow through the device when the servo valve is open, and further provides for a soft start when the servo valve is closed to open the main valve. The fixed orifice, servo valve including a servo valve orifice and electrostatically controlled closure tabs, and a microbridge flow sensing device, are advantageously formed on a monolithic semiconductor chip mounted inside the housing. Significantly, a dielectric layer is deposited on a portion of the substrate surface surrounding the orifice formed therein to form the mesa and subsequently other dielectric and conductive layers are deposited with etching.
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H. Jerman, "Electrically Motivated, Normally-Closed Diaphragm Valves", May 1991, pp. 1045-1048.
T. Ohnstein et al., "Micromachined Silicon Microvalve", Feb. 1990, pp. 95-98.
Bonne Ulrich
Ohnstein Thomas R.
Honeywell Inc.
Powell William
Shudy Jr. John G.
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