Microstructure device including a compressively stressed...

Details Microstructure device including a compressively stressed... Microstructure device including a compressively stressed...

2009-03-02

2011-11-29

Blum, David S (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21240, C257SE29255

Reexamination Certificate

active

08067315

ABSTRACT:
A nitrogen-containing silicon carbide material may be deposited on the basis of a single frequency or mixed frequency deposition recipe with a high internal compressive stress level up to 1.6 GPa or higher. Thus, this dielectric material may be advantageously used in the contact level of sophisticated integrated circuits, thereby providing high strain levels while not unduly contributing to signal propagation delay.

REFERENCES:
patent: 2007/0296027 (2007-12-01), Yang et al.
patent: WO 2007/149788 (2007-12-01), None
Translation of Official Communication from German Patent Office for German Patent Application No. 10 2008 026 182.3-33 dated Jul. 26, 2009.

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