Microstructure and single mask, single-crystal process for fabri

Details Microstructure and single mask, single-crystal process for fabri Microstructure and single mask, single-crystal process for fabri

1997-02-24

1998-12-08

Niebling, John

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

438702, 438739, H01L 2144

Patent

active

058468498

ABSTRACT:
A single mask, low temperature reactive ion etching process for fabricating high aspect ratio, released single crystal microelectromechanical structures independently of crystal orientation.

REFERENCES:
patent: 3672985 (1972-06-01), Nathanson et al.
patent: 4437226 (1984-03-01), Soclof
patent: 4472239 (1984-09-01), Johnson et al.
patent: 4522682 (1985-06-01), Soclof
patent: 4670092 (1987-06-01), Motamedi
patent: 4682503 (1987-07-01), Higashi et al.
patent: 4685198 (1987-08-01), Kawakita et al.
patent: 4740410 (1988-04-01), Muller et al.
patent: 4776924 (1988-10-01), Delapierre
patent: 4783237 (1988-11-01), Aine et al.
patent: 4783821 (1988-11-01), Muller et al.
patent: 4845048 (1989-07-01), Tamaki et al.
patent: 4853348 (1989-08-01), Tsubouchi et al.
patent: 4980317 (1990-12-01), Koblinger et al.
patent: 5072288 (1991-12-01), MacDonald et al.
patent: 5198390 (1993-03-01), MacDonald et al.
patent: 5393375 (1995-02-01), MacDonald et al.
patent: 5426070 (1995-06-01), Shaw et al.
"Fabrication of High Frequency Two-Dimensional Nanoactuators for Scanned Probe Devices", Yao et al Journal of Microelectromechanical Systems, vol. 1, No. 1, Mar. 1992, p. 14.
"New SOI CMOS Process with Selective Oxidation" Kubota et al IDEM 86, pp. 814-816.
"Nanostructures in Motion" Yao et al, Nanostructures and Mesoscopic Systems Wiley P. Kirk and Mark Reed, Eds. Academic Press, Dec. 1991; pp. 1-9.
Zhang and MacDonald; An rie process for submicron, silicon electromechanical structures; May 1991; pp. 520-523.
Lutze, Perera, & Krusius; Anisotropic Reactive Ion Etching of Aluminum Using CI.sub.2, BC.sub.3, and CH.sub.4 Gases; Jan. 1990; J. Electrochem. Soc., vol. 137, No. 1.
Susanne C. Arney and Noel C. MacDonald; Formation of submicron silicon-on-insulator structures by lateral oxidation of substrate-silicon islands; Dec. 1987; pp. 341-345.
Mele, Arney, Krusius, and MacDonald; Anisotropic Reactive Ion Etching of MoSi.sub.2 and In Situ Doped n+ and p+ Polysilicon Using CI.sub.2 and BCI.sub.3 ; J. Electrochem. Soc., vol. 135, No. 9.; Sep. 1988; pp. 2373-2378.

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