Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2006-11-22
2010-06-08
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
Reexamination Certificate
active
07732241
ABSTRACT:
An object is to provide a microstructure in which shear stress of a structural layer is increased, a manufacturing method thereof, and a microelectromechanical system. A sacrificial layer is formed over a substrate. A metal film is formed over the sacrificial layer. The metal film is irradiated with a laser beam. Needle-like crystals of the metal film are reduced or eliminated. The metal film is etched and processed into a predetermined shape to form a metal layer. Then, the sacrificial layer is removed. Accordingly, a microelectromechanical system which is excellent in reliability and in which a resistance property to breakage of a movable portion of the microstructure is improved can be provided.
REFERENCES:
patent: 4372989 (1983-02-01), Menzel
patent: 4477316 (1984-10-01), Sakai et al.
patent: 5066611 (1991-11-01), Yu
patent: 5208187 (1993-05-01), Tsubouchi et al.
patent: 5242863 (1993-09-01), Xiang-Zheng et al.
patent: 5290731 (1994-03-01), Sugano et al.
patent: 5801069 (1998-09-01), Harada et al.
patent: 6020215 (2000-02-01), Yagi et al.
patent: 6127765 (2000-10-01), Fushinobu
patent: 6537864 (2003-03-01), Aya et al.
patent: 6762471 (2004-07-01), Kim
patent: 6860939 (2005-03-01), Hartzell
patent: 6933165 (2005-08-01), Musolf et al.
patent: 7125451 (2006-10-01), Hartzell
patent: 7128783 (2006-10-01), Hartzell
patent: 7135070 (2006-11-01), Hartzell
patent: 7156916 (2007-01-01), Hartzell
patent: 7195946 (2007-03-01), D'Arrigo et al.
patent: 7217588 (2007-05-01), Hartzell et al.
patent: 7230306 (2007-06-01), Hartzell
patent: 7253488 (2007-08-01), Zhan et al.
patent: 7253705 (2007-08-01), Song et al.
patent: 7299529 (2007-11-01), Ginsburg et al.
patent: 7341884 (2008-03-01), Hartzell
patent: 7528529 (2009-05-01), Yamaguchi et al.
patent: 7537953 (2009-05-01), Tateishi et al.
patent: 2004/0207490 (2004-10-01), Jun et al.
patent: 2005/0085000 (2005-04-01), Ikeda et al.
patent: 2005/0146401 (2005-07-01), Tilmans et al.
patent: 2005/0218754 (2005-10-01), Yokoyama et al.
patent: 2006/0057756 (2006-03-01), Sato et al.
patent: 2006/0166393 (2006-07-01), Ha et al.
patent: 2006/0202779 (2006-09-01), Fazzio et al.
patent: 2006/0267153 (2006-11-01), Yamaguchi et al.
patent: 2006/0270238 (2006-11-01), Izumi et al.
patent: 2006/0284183 (2006-12-01), Izumi et al.
patent: 2007/0001224 (2007-01-01), Yamaguchi et al.
patent: 2007/0037311 (2007-02-01), Izumi et al.
patent: 2007/0093045 (2007-04-01), Yamaguchi et al.
patent: 2007/0120625 (2007-05-01), Larson, III et al.
patent: 2007/0222336 (2007-09-01), Grannen et al.
patent: 0 465 264 (1992-01-01), None
patent: 04-065385 (1992-03-01), None
patent: 2001-189458 (2001-07-01), None
patent: 2004-001200 (2004-01-01), None
patent: 2004-312611 (2004-11-01), None
patent: 2005-123561 (2005-05-01), None
patent: 2005-210614 (2005-08-01), None
Izumi Konami
Shiraishi Kojiro
Yamaguchi Mayumi
Fish & Richardson P.C.
Mulpuri Savitri
Semiconductor Energy Labortory Co., Ltd.
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