Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2011-07-05
2011-07-05
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257S418000, C257S420000, C257S425000, C257SE31127, C438S048000, C438S052000, C310S309000, C361S207000, C216S002000, C216S079000
Reexamination Certificate
active
07973373
ABSTRACT:
A microminiature moving device has disposed on a single-crystal silicon substrate movable elements such as a movable rod and a movable comb electrode that are displaceable in parallel to the substrate surface and stationary parts that are fixedly secured to the single -crystal silicon substrate with an insulating layer sandwiched between. Depressions are formed in the surface regions of the single-crystal silicon substrate where no stationary parts are present and the movable parts are positioned above the depressions. The depressions form gaps large enough to prevent foreign bodies from causing shorts and malfunctioning of the movable parts.
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Office action dated Aug. 18, 2009 for priority patent application No. JP 2005-010514.
Hamada Yoshihiko
Imaki Osamu
Kato Yoshichika
Kondou Kenji
Mori Keiichi
Japan Aviation Electronics Industry Limited
Kim Su C
Lathrop David N.
Smith Matthew
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