Micromechanical system fabrication method using (111) single cry

Details Micromechanical system fabrication method using (111) single cry Micromechanical system fabrication method using (111) single cry

1999-02-16

2000-11-21

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438704, 438712, 438753, 216 2, H01L 21311, H01L 21302, C23F 100

Patent

active

061502758

ABSTRACT:
Disclosed is a micromechanical system fabrication method using (111) single crystalline silicon as a silicon substrate and employing a reactive ion etching process in order to pattern a microstructure that will be separated from the silicon substrate and a selective release-etching process utilizing an aqueous alkaline solution in order to separate the microstructure from the silicon substrate. According to the micromechanical system fabrication method of the present invention, the side surfaces of microstructures can be formed to be vertical by employing the RIE technique. Furthermore, the microstructures can be readily separated from the silicon substrate by employing the selective release-etching technique using slow etching {111} planes as the etch stop in an aqueous alkaline solution. In addition, etched depths can be adjusted during the RIE step, thereby adjusting the thickness of the microstructure and the spacing between the microstructure and the silicon substrate.

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Wolf et al. Silicon Processing for the VLSI Era Volume 1:Process Technology, Lattice Press, Sunset Beach, CA, USA, pp.555, 1986.

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