Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Warping of semiconductor substrate
Reexamination Certificate
2006-10-03
2006-10-03
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Warping of semiconductor substrate
C438S458000, C438S425000, C438S439000
Reexamination Certificate
active
07115480
ABSTRACT:
One aspect disclosed herein relates to a method for forming a strained semiconductor structure. In various embodiments of the method, a number of recesses are formed in a surface of a first semiconductor wafer such that the surface of the first semiconductor wafer has a number of raised areas and a number of recessed areas. A surface of a second semiconductor wafer is bonded to the raised areas of the first semiconductor wafer in an environment having a first pressure. The surface of the second semiconductor wafer is bonded to the recessed areas of the first semiconductor wafer in an environment having a second pressure. The second pressure is greater than the first pressure to influence the second semiconductor wafer into contact with the first semiconductor wafer in the recesses in the surface of the first semiconductor wafer. Other aspects are provided herein.
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Micro)n Technology, Inc.
Perkins Pamela E
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