Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Patent
1998-12-02
2000-07-18
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
257415, H01L 2982
Patent
active
060911255
ABSTRACT:
The present invention is an active micromechanical electronic device of extremely small physical size, such that the device can take advantage of the quantum-mechanical phenomenon of electron tunneling. The device is produced using Scanning Electron Microscope (SEM) electron beam lithography. In operation, the gap between the tip of the beam and the drain contact is small enough (typically tens of angstroms) that electron tunneling occurs across the gap between the tip of the beam and the drain contact occurs, with the amount of resulting electron flow dependent on the width of the gap between the tip and the drain contact. The device acts as a controlled current source whose output is dependent on the mechanical position of the beam tip with respect to the drain contact. The tip to drain spacing varies due to the electrostatic force presented between the beam and the gate contact.
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Meier Stephen D.
Northeastern University
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