Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2011-08-23
2011-08-23
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S418000, C257S419000, C257SE23181, C257SE23182
Reexamination Certificate
active
08004053
ABSTRACT:
A micromechanical device according to an aspect of the present invention includes, a substrate, a micromachine which is mounted on the substrate, is provided with a mechanism deformed by a function of an electric field, and changes the electrical characteristics concomitantly with the deformation, an inner inorganic sealing film which contains an inorganic material, is provided on a principal surface of the substrate, covers the micromachine through a hollow section containing a gaseous body therein, and is provided with opening shape sections allowing the hollow section to communicate with the outside, an organic sealing film which contains an organic material, is formed on the inner inorganic sealing film, and blocks up the opening shape sections, and an outer inorganic sealing film which contains an inorganic material with lower moisture permeability than the organic material, is formed on the organic sealing film, and covers the organic sealing film.
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Inoue Michinobu
Miyagi Takeshi
Obata Susumu
Sugizaki Yoshiaki
Kabushiki Kaisha Toshiba
Ngo Ngan
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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