Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2006-03-28
2011-11-22
Fulk, Steven (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257SE29324, C438S052000
Reexamination Certificate
active
08063458
ABSTRACT:
A micromechanical component that can be produced in an integrated thin-film method is disclosed, which component can be produced and patterned on the surface of a substrate as multilayer construction. At least two metal layers that are separated from the substrate and with respect to one another by interlayers are provided for the multilayer construction. Electrically conductive connecting structures provide for an electrical contact of the metal layers among one another and with a circuit arrangement arranged in the substrate. The freely vibrating membrane that can be used for an inertia sensor, a microphone or an electrostatic switch can be provided with matching and passivation layers on all surfaces in order to improve its mechanical properties, said layers being concomitantly deposited and patterned during the layer producing process or during the construction of the multilayer construction. Titanium nitride layers are advantageously used for this.
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Loeffler Bernhard
Schrank Franz
austriamicrosystems AG
Fulk Steven
O'Connor Cozen
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