Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2011-04-12
2011-04-12
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C438S050000, C257SE21613
Reexamination Certificate
active
07923794
ABSTRACT:
A micromechanical component having a substrate and having a thin-layer, as well as having a cavity which is bounded by the substrate and the thin-layer, at least one gas having an internal pressure being enclosed in the cavity. The gas phase has a non-atmospheric composition. A method for producing a micromechanical component having a substrate and having a thin-layer encapsulation, as well as having a cavity which is bounded by the substrate and the thin-layer encapsulation. The method has the steps of positioning a polymer in a cavity, closing the cavity and generating a gas phase of non-atmospheric composition in the cavity by decomposing at least a part of the polymer. An internal pressure is generated, which may be higher than the process pressure when the cavity is closed.
REFERENCES:
patent: 6165890 (2000-12-01), Kohl et al.
patent: 7429495 (2008-09-01), Wan
patent: 7670861 (2010-03-01), Hanaoka et al.
patent: 0 410 108 (1991-01-01), None
patent: WO 2007/078495 (2007-07-01), None
Hoang Quoc D
Kenyon & Kenyon LLP
Robert & Bosch GmbH
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