Micromechanical accelerometer with plate-like semiconductor wafe

Details Micromechanical accelerometer with plate-like semiconductor wafe Micromechanical accelerometer with plate-like semiconductor wafe

1996-01-02

1997-03-25

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

257417, 257418, 257420, 7351422, 7351423, 7351432, 7351436, 73DIG1, H01L 2982

Patent

active

056147422

ABSTRACT:
A high precision micromechanical accelerometer comprises a layered structure of five (5) semiconductor wafers insulated from one another by thin oxide layers. The accelerometer is formed by first connecting a coverplate and a baseplate to associated insulating plates. Counter-electrodes, produced by anisotropic etching from the respective insulating plates, are fixed to the coverplate and the baseplate respectively. The counter-electrodes are contactable through the cover or baseplate via contact windows. A central wafer contains a unilaterally linked mass (pendulum) that is also produced by anisotropic etching and which serves as a movable central electrode of a differential capacitor. The layered structure is hermetically sealed by semiconductor fusion bonding. A stepped gradation from the top is formed at a wafer edge region for attaching contact pads to individual wafers to permit electrical contacting of individual wafers. The invention permits fabrication of a .mu.B device characterized by extremely small leakage capacitances and high temperature stability.

REFERENCES:
patent: 4435737 (1984-03-01), Colton
patent: 5006487 (1991-04-01), Stokes
patent: 5352918 (1994-10-01), Thomas et al.
patent: 5381300 (1995-01-01), Thomas et al.

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