Etching a substrate: processes – Etching of semiconductor material to produce an article...
Patent
1996-12-19
1999-11-02
Powell, William
Etching a substrate: processes
Etching of semiconductor material to produce an article...
216 52, 216 65, 216 79, H01L 2100, B44C 122
Patent
active
059763906
ABSTRACT:
A minute structure such as a cantilever 11 is formed on a silicon substrate 10 and heated by irradiating a laser beam to a part of the cantilever 11, by which the cantilever 11 is bent. The two bent cantilevers 11 are inserted into through holes 14 in a crystal substrate 10 formed in advance, and the tip end portions 15 thereof are heated. The heared tip end portions 15 become thicker and at the same time shorter, so that the crystal substrate 12 can be fixed to the silicon substrate 10 without play. By heating a part of the minute structure by such a method, plastic deformation is produced, so that bending and deforming can be performed. Thereby, a three-dimensional micromachined structure is constructed and assembled.
REFERENCES:
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patent: 4783237 (1988-11-01), Aine et al.
patent: 4891255 (1990-01-01), Ciarlo
patent: 5179499 (1993-01-01), MacDonald et al.
patent: 5364497 (1994-11-01), Chau et al.
patent: 5537276 (1996-07-01), Mukae et al.
Patent Abstracts of Japan, vol. 011, No. 301, (M-628) Sep. 30, 1987.
Powell William
Seiko Instruments Inc.
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