Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Patent
1995-05-18
1997-05-06
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
257622, 200 83N, 200 83V, H01L 2982
Patent
active
056273967
ABSTRACT:
A bridging member extending across a cavity in a semiconductor substrate (e.g. signal crystal silicon) has successive layers--a masking layer, an electrically conductive layer (e.g. polysilicon) and an insulating layer (e.g. SiO.sub.2). A first electrical contact (e.g. gold coated with ruthenium) extends on the insulating layer in a direction perpendicular to the extension of the bridging member across the cavity. A pair of bumps (e.g. gold) are on the insulating layer each between the contact and one of the cavity ends. Initially the bridging member and then the contact and the bumps are formed on the substrate and then the cavity is etched in the substrate through holes in the bridging member. A pair of second electrical contacts (e.g. gold coated with ruthenium) are on the surface of an insulating substrate (e.g. pyrex glass) adjacent the semiconductor substrate. The two substrates are bonded after the contacts are cleaned. The first contact is normally separated from the second contacts because the bumps engage the insulating substrate surface. When a voltage is applied between an electrically conductive layer on the insulating substrate surface and the polysilicon layer, the bridging member is deflected so that the first contact engages the second contacts. Electrical leads extend on the surface of the insulating substrate from the second contacts to bonding pads disposed adjacent a second cavity in the semiconductor substrate. The resultant relays on a wafer may be separated by sawing the semiconductor and insulating substrates at the position of the second cavity in each relay to expose the pads for electrical connections.
REFERENCES:
patent: 5479042 (1995-12-01), James et al.
James Christopher D.
Katzenstein Henry S.
Brooktree Corporation
Ngo Ngan V.
Roston Ellsworth R.
Schwartz Charles H.
LandOfFree
Micromachined relay and method of forming the relay does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Micromachined relay and method of forming the relay, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Micromachined relay and method of forming the relay will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2134504