Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2007-10-16
2007-10-16
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S693000, C257S419000, C257SE21237, C333S133000, C333S186000
Reexamination Certificate
active
10864841
ABSTRACT:
In a production method of a micromachine having a space between first and second electrodes, a first electrode is formed on a substrate, and then a stopper film is formed on its surface. Next, a second insulating film is formed as to cover the stopper film. The thickness of the second insulating film is larger than a total thickness of the first electrode and stopper film. Then, second insulating film is polished. By this polishing, the stopper film is exposed to the outside to the outside, and is planarized. After forming an opening in the stopper film, a sacrifice film is burred in the opening. Surfaces of the sacrifice film and second insulating film are planarized, and a second electrode is formed on the second insulating film as to cross the sacrifice film. A space is formed between the first and second electrodes by removing the sacrifice film.
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G. Schwartz, “Handbook of Semiconductor Interconnection Technology,” 2ndEdition, pp. 443-447.
Baumeister B. William
Fulk Steven J.
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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