Micromachine and method for manufacturing the same

Details Micromachine and method for manufacturing the same Micromachine and method for manufacturing the same

2011-08-16

2011-08-16

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257SE29167

Reexamination Certificate

active

07999335

ABSTRACT:
A structure which prevents thinning and disconnection of a wiring is provided, in a micromachine (MEMS structure body) formed with a surface micromachining technology. A wiring (upper auxiliary wiring) over a sacrificial layer is electrically connected to a different wiring (upper connection wiring) over the sacrificial layer, so that thinning, disconnection, and the like of the wiring formed over the sacrificial layer at a step portion generated due to the thickness of the sacrificial layer can be prevented. The wiring over the sacrificial layer is formed of the same conductive film as an upper driving electrode which is a movable electrode and is thus thin. However, the different wiring is formed over a structural layer, which is formed by a CVD method and has a rounded step, and has a thickness of 200 nm to 1 μm, whereby thinning, disconnection, and the like of the wiring can be further prevented.

REFERENCES:
patent: 7202497 (2007-04-01), Ohtani et al.
patent: 2006/0270238 (2006-11-01), Izumi et al.
patent: 7-66280 (1995-03-01), None

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