Microlens designs for CMOS image sensors

Details Microlens designs for CMOS image sensors Microlens designs for CMOS image sensors

2007-03-27

2007-03-27

Potter, Roy Karl (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

Reexamination Certificate

active

10908837

ABSTRACT:
Described are microlens designs to increase quantum efficiency and improve photonic performance of photosensitive integrated circuit device. A photosensitive integrated circuit made up of photodiodes, dielectric layers, metal contact holes, metal layers, and passivation stacks are formed on a semiconductor substrate. Microlenses are then formed over these encapsulating layers, the microlenses comprising non-planar surfaces, in particular a biconvex microlens formed above the photodiodes to direct, deliver, and focus incident light to the photodiodes for increased quantum efficiency and improved photonic performance. Color filters are then formed over the microlenses and the photodiodes so as to filter specific wavelengths of light.

REFERENCES:
patent: 5595930 (1997-01-01), Baek
patent: 5677200 (1997-10-01), Park et al.
patent: 5796154 (1998-08-01), Sano et al.
patent: 6001540 (1999-12-01), Huang et al.
patent: 6252218 (2001-06-01), Chou
patent: 6274917 (2001-08-01), Fan et al.
patent: 6495813 (2002-12-01), Fan et al.
patent: 6643386 (2003-11-01), Foster
patent: 6737719 (2004-05-01), Yamamoto

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