Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned
Reexamination Certificate
2007-03-27
2007-03-27
Sines, Brian (Department: 1743)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Self-aligned
C422S050000, C422S068100, C422S081000, C422S082000, C422S105000, C422S105000, C422S105000, C422S105000, C422S105000, C436S043000, C436S063000, C436S180000, C029S592000, C029S592100, C029S025010, C438S048000, C438S049000, C438S372000, C438S373000, C438S376000, C438S505000, C438S506000, C438S510000, C438S514000
Reexamination Certificate
active
10384349
ABSTRACT:
A method to achieve controlled conductivity in microfluidic devices, and a device formed thereby. The method comprises forming a microchannel or a well in an insulating material, and ion implanting at least one region of the insulating material at or adjacent the microchannel or well to increase conductivity of the region.
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Bousse Luc J.
McReynolds Richard J.
Stern Seth R.
Caliper Life Sciences, Inc.
McKenna Donald R.
Petersen Ann C.
Sines Brian
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