Microelectronic substrate with integrated devices

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – On insulating carrier other than a printed circuit board

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S723000, C257S685000, C257S701000, C257S758000, C257S774000, C257S680000, C257S673000, C257S782000

Reexamination Certificate

active

06734534

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to apparatus and processes for the fabrication of a microelectronic substrate. In particular, the present invention relates to a fabrication technology that encapsulates at least one microelectronic die within a microelectronic substrate core or that encapsulates at least one microelectronic die (without a microelectronic substrate core) to form a microelectronic substrate.
2. State of the Art
Substrates which connect individual microelectronic devices exist in virtually all recently manufactured electronic equipment. These substrates are generally printed circuit boards. Printed circuit boards are basically dielectric substrates with metallic traces formed in or upon the dielectric substrate. One type of printed circuit board is a single-sided board. As shown in
FIG. 20
, single-sided board
200
consists of a dielectric substrate
202
, such as an FR4 material, epoxy resins, polyimides, triazine resins, and the like, having conductive traces
204
, such as copper, aluminum, and the like, on one side (i.e., first surface
206
), wherein the conductive traces
204
electrically interconnect microelectronic devices
208
(shown as flip-chips) attached to the first surface
206
. However, single-sided boards
200
result in relatively long conductive traces
204
which, in turn, results in slower speeds and performance. Single-sided boards
200
also require substantial surface area for the routing of the conductive traces
204
to interconnect the various microelectronic devices
208
which increases the size of the resulting assembly.
It is, of course, understood that the depiction of the dielectric substrate
202
, the conductive traces
204
, and the microelectronic devices
208
in
FIG. 20
(and subsequently
FIGS. 21 and 22
) are merely for illustration purposes and certain dimensions are greatly exaggerated to show the concept, rather than accurate details thereof.
Double-sided boards
210
were developed to help alleviate the problem with relatively long conductive traces. As shown in
FIG. 21
, the double-sided board
210
comprises a dielectric substrate
202
having conductive traces
204
on the dielectric substrate first surface
206
and on a dielectric substrate second surface
212
. At least one electrically conductive via
214
extends through the dielectric substrate
202
to connect at least one conductive trace
204
on the first surface
206
with at least one conductive trace
204
on the second surface
212
. Thus, the microelectronic devices
208
on the dielectric substrate first surface
206
and on the dielectric substrate second surface
212
may be in electrical communication. The electrically conductive vias
214
are generally plated through-hole vias and may be formed in any manner known in the art.
FIG. 22
illustrates another board design, known as a multi-layer board
220
. A multi-layer board
220
comprises two or more pieces of dielectric material (shown as first dielectric material
222
and second dielectric material
224
) with conductive traces
204
thereon and therebetween with electrically conductive vias
214
formed through the first dielectric material
222
and the second dielectric material
224
. This design allows for shorter traces and reduced surface area requirements for conductive trace
204
routing.
Although such boards have been adequate for past and current microelectronic device applications, the need for higher performance and shorter traces of substrate boards increases as the speed and performance of the microelectronic devices increases. Therefore, it would be advantageous to develop new substrates/boards, which achieve higher speed and performance.


REFERENCES:
patent: 5048179 (1991-09-01), Shindo et al.
patent: 5324687 (1994-06-01), Wojnarowski
patent: 5353195 (1994-10-01), Fillion et al.
patent: 5353498 (1994-10-01), Fillion et al.
patent: 5422513 (1995-06-01), Marcinkiewicz et al.
patent: 5497033 (1996-03-01), Fillion et al.
patent: 5527741 (1996-06-01), Cole et al.
patent: 5696666 (1997-12-01), Miles et al.
patent: 5703400 (1997-12-01), Wojnarowski et al.
patent: 5745984 (1998-05-01), Cole, Jr. et al.
patent: 5841193 (1998-11-01), Eichelberger
patent: 5998859 (1999-12-01), Griswold et al.
patent: 6023096 (2000-02-01), Hotta et al.
patent: 6127833 (2000-10-01), Wu et al.
patent: 6180881 (2001-01-01), Isaak
patent: 6221694 (2001-04-01), Bhatt et al.
patent: 6239482 (2001-05-01), Fillion et al.
patent: 6265759 (2001-07-01), DiStefano et al.
patent: 6271469 (2001-08-01), Ma et al.
patent: 6288905 (2001-09-01), Chung
patent: 6306680 (2001-10-01), Fillion et al.
patent: 6389689 (2002-05-01), Heo
patent: 6489185 (2002-12-01), Towle et al.
patent: 2002/0105073 (2002-08-01), Smith
patent: 2003/0013232 (2003-01-01), Towle et al.
patent: 11045955 (1999-02-01), None
patent: 11312868 (1999-11-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Microelectronic substrate with integrated devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Microelectronic substrate with integrated devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microelectronic substrate with integrated devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3254421

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.