Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-08-09
2011-08-09
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE21495, C257SE23179, C438S622000
Reexamination Certificate
active
07994639
ABSTRACT:
A microelectronic structure, and in particular a semiconductor structure, includes a substrate and a dielectric layer located over the substrate. In addition at least one alignment mark is located interposed between the dielectric layer and the substrate. The at least one alignment mark comprises, or preferably consists essentially of, at least one substantially present element having an atomic number at least 5 greater than a highest atomic number substantially present element within materials surrounding the alignment mark Also included within the microelectronic structure is a dual damascene aperture located within the dielectric layer. The dual damascene aperture may be fabricated using, among other methods, a hybrid lithography method that uses direct write lithography and optical lithography, in conjunction with the at least one alignment mark and an electron beam as an alignment beam.
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Bucchignano James J.
Gibson, Jr. Gerald Warren
Rothwell Mary Beth
Yu Roy Rongqing
Anya Igwe U
Bryant Kiesha R
International Business Machines - Corporation
Morris, Esq. Daniel P.
Scully , Scott, Murphy & Presser, P.C.
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