Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – By pressure alone
Reexamination Certificate
2005-05-27
2008-11-18
Chu, Chris C. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
By pressure alone
C257SE23065, C257S678000, C257S746000, C257S786000, C174S050510, C174S050510, C361S760000
Reexamination Certificate
active
07453157
ABSTRACT:
A microelectronic package includes a microelectronic element having faces, contacts and an outer perimeter, and a flexible substrate overlying and spaced from a first face of the microelectronic element, an outer region of the flexible substrate extending beyond the outer perimeter of the microelectronic element. The package includes a plurality of etched conductive posts exposed at a surface of the flexible substrate and being electrically interconnected with the microelectronic element, wherein at least one of the conductive posts is disposed in the outer region of the flexible substrate, and a compliant layer disposed between the first face of the microelectronic element and the flexible substrate, wherein the compliant layer overlies the at least one of the conductive posts that is disposed in the outer region of the flexible substrate. The package includes an encapsulating mold material in contact with the microelectronic element and the compliant layer, whereby the encapsulating mold material overlies the outer region of the flexible substrate.
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Beroz Masud
Haba Belgacem
Kang Teck-Gyu
Krishnan Sridhar
Kubota Yoichi
Chu Chris C.
Lerner David Littenberg Krumholz & Mentlik LLP
Tessera Inc.
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