Microelectronic integrated circuit including triangular CMOS "na

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257206, 257208, H01L 2976, H01L 2710, H01L 31062, H01L 31113

Patent

active

056506538

ABSTRACT:
A microelectronic integrated circuit includes a semiconductor substrate, and a plurality of CMOS microelectronic devices formed on the substrate. Each device includes a triangular ANY element of a first conductivity type (PMOS or NMOS), and a triangular ALL element of a second conductivity type (NMOS or PMOS), the ANY and ALL elements each having a plurality of inputs and an output that are electrically interconnected respectively. The ANY element is basically an OR element, and the ALL element is basically an AND element. However, the power supply connections and the selection of conductivity type (NMOS or PMOS) for the ANY and ALL elements can be varied to provide the device as having a desired NAND, AND, NOR or OR configuration, in which the ANY element acts as a pull-up and the ALL element acts as a pull-down, or vice-versa.

REFERENCES:
patent: 4626880 (1986-12-01), Minh et al.
patent: 5187552 (1993-02-01), Hendrickson et al.
patent: 5406104 (1995-04-01), Hirota et al.
patent: 5442246 (1995-08-01), Azegami et al.

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