Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2005-09-01
2008-11-18
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S068000, C438S069000, C438S073000
Reexamination Certificate
active
07452743
ABSTRACT:
Microelectronic imaging units and methods for manufacturing a plurality of imaging units at the wafer level are disclosed herein. In one embodiment, a method for manufacturing a plurality of imaging units includes providing an imager workpiece having a plurality of imaging dies including integrated circuits, external contacts electrically coupled to the integrated circuits, and image sensors operably coupled to the integrated circuits. The individual image sensors include at least one dark current pixel at a perimeter portion of the image sensor. The method includes depositing a cover layer onto the workpiece and over the image sensors. The method further includes patterning and selectively developing the cover layer to form discrete volumes of cover layer material over corresponding image sensors. The discrete volumes of cover layer material have sidewalls aligned with an inboard edge of the individual dark current pixels such that the dark current pixels are not covered by the discrete volumes.
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International Search Report and Written Opinion dated Mar. 13, 2008 issued in Application No. PCT/US2006/034011.
Farnworth Warren M.
Hembree David R.
Hiatt William Mark
Kirby Kyle K.
Oliver Steven D.
Aptina Imaging Corporation
Dickstein & Shapiro LLP
Trinh Michael
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