Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2007-09-25
2009-11-03
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S003000, C257S004000, C257SE31029, C365S148000
Reexamination Certificate
active
07612359
ABSTRACT:
A dielectric layer is formed on a region of a microelectronic substrate. A sacrificial layer is formed on the dielectric layer, and portions of the sacrificial layer and the dielectric layer are removed to form an opening that exposes a portion of the region. A conductive layer is formed on the sacrificial layer and in the opening. Portions of the sacrificial layer and the conductive layer on the dielectric layer are removed to leave a conductive plug in the dielectric layer and in contact with the region. Removal of the sacrificial layer and portions of the conductive layer on the dielectric layer may include polishing to expose the sacrificial layer and to leave a conductive plug in the sacrificial layer and the dielectric layer, etching the sacrificial layer to expose the dielectric layer and leave a portion of the conductive plug protruding from the dielectric layer, and polishing to remove the protruding portion of the conductive plug. Phase-change memory devices formed by such techniques are also discussed.
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Cho Sung-Lae
Choi Suk-Hun
Park Joon-Sang
Son Yoon-Ho
Myers Bigel & Sibley & Sajovec
Pert Evan
Samsung Electronics Co,. Ltd.
Wilson Scott R
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