Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-01-31
1999-02-09
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257530, 257780, H01L 2158, H01L 2160
Patent
active
058698698
ABSTRACT:
Microelectronic devices are formed on a substrate of an integrated circuit. An electrically conductive ground or power plane, and an ElectroStatic Discharge (ESD) protection layer are formed on the substrate. Terminals such as solder ball or wire bond pads are formed on the substrate, and are electrically connected to the devices. The protection layer is patterned such that portions thereof are disposed between the terminals and the plane to define vertical electrical discharge paths. The protection layer is formed of a material such as SurgX.TM. which is normally dielectric, and is rendered conductive in the discharge paths by an electrostatic potential applied to the terminals during an ESD event to shunt the electrostatic potential from the terminals to the plane. Alternatively, the protection layer can be formed between the terminals to define lateral discharge paths.
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LSI Logic Corporation
Monin, Jr. Donald L.
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