Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-07-18
2006-07-18
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S018000, C257S190000, C257S191000, C257S192000
Reexamination Certificate
active
07078723
ABSTRACT:
A microelectronic device includes a substrate, and a patterned feature located over the substrate and a plurality of doped regions, wherein the patterned feature includes at least one electrode. The microelectronic device includes at least one sill region for the enhancement of electron and/or hole mobility.
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Chang Sun-Jay
Lee Wen-Chin
Lin Chuan-Yi
Wu Shien-Yang
Haynes and Boone LLP
Huynh Andy
Taiwan Semiconductor Manufacturing Company , Ltd.
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