Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2005-05-17
2005-05-17
Sarkar, Asok Kumar (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C361S777000, C361S778000
Reexamination Certificate
active
06894399
ABSTRACT:
A microelectronic device includes a microelectronic die having an interfacial metal layer deposited over an active surface thereof to perform a signal distribution function within the device. The microelectronic die is fixed within a package core to form a die/core assembly. One or more metallization layers may then be built up over the die/core assembly as part of a packaging scheme. The interfacial metal layer can be applied either before or after the die is fixed within the package core. In one approach, the interfacial layer is applied during wafer-level processing.
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Ton Tuy T.
Towle Steven
Vu Quat T.
Intel Corporation
Sarkar Asok Kumar
Schwegman Lundberg Woessner & Kluth P.A.
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