Microelectronic device fabrication method

Details Microelectronic device fabrication method Microelectronic device fabrication method

2005-08-16

2005-08-16

Baumeister, B. William (Department: 2825)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S169000, C438S172000, C438S570000, C438S571000, C438S597000, C438S598000, C257S025000, C257S027000, C257S030000, C257S054000, C257S183000, C257S183100, C257S267000, C257S280000, C257S281000

Reexamination Certificate

active

06929987

ABSTRACT:
In a method of forming a semiconductor device with a first channel layer formed over a portion of a second channel layer, a portion of the second channel underlying the first channel is etched so as to form an overhanging ledge in the first channel, and then a metallic contact disposed on top of the ledge portion is diffused into the first channel by ohmic alloying to form an electrode in the first channel.

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