Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-05-19
1997-02-25
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257254, 257325, 2504921, H01L 2720, H01L 2976
Patent
active
056061900
ABSTRACT:
A microelectronic circuit structure has a semiconductor layer and a dielectric layer that are arranged neighboring one another. The dielectric layer comprises a charge distribution localized close to the boundary surface to the semiconductor layer which effects a shift of the local semiconductor surface potential in the semiconductor layer. The charge distribution, in particular, is non-uniform in the plane parallel to the boundary surface to the semiconductor layer so that the shift of the local semiconductor surface potential is effected in a limited region. Structures having dimensions down to 10 nm can thereby be produced by driving charge carriers into the dielectric layer in the electrical field between a pointed metal tip and the semiconductor layer.
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Hofmann Karl
Schultz Maximilian
Martin Wallace Valencia
Saadat Mahshid
Siemens Aktiengesellschaft
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