Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Patent
1997-01-31
1998-06-30
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
257207, 257208, 257754, 257773, 257786, 438180, 438197, 438106, 438213, 438279, 438655, 438694, H01L 2972
Patent
active
057738556
ABSTRACT:
Field-effect transistors are formed on a substrate having silicided elements including diffusion (source and drain) regions and polysilicon gates. The silicided surfaces of these elements have low ohmic resistance and are used to provide interconnection between contacts that are spaced from each other, thereby freeing routing areas for other interconnections. The diffusion regions of adjacent transistors have edges that face each other, and are formed with indentations which constitute portions of a substrate tap area. The low ohmic resistance of the silicided surfaces of the diffusion regions enables the substrate tap area to be cut out of the diffusion regions without degrading the electrical performance of the transistors, thereby providing a substantial reduction in the space required for the transistors on the substrate.
REFERENCES:
patent: 4890191 (1989-12-01), Rokos
patent: 4946798 (1990-08-01), Kawakatsu
patent: 5438214 (1995-08-01), Egawa et al.
Cheung Gary
Colwell Michael
Torgerson Paul
LSI Logic Corporation
Wojciechowicz Edward
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