Microelectronic capacitors having tantalum pentoxide dielectrics

Details Microelectronic capacitors having tantalum pentoxide dielectrics Microelectronic capacitors having tantalum pentoxide dielectrics

1997-04-21

1999-01-12

Kincaid, Kristine L.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

3613215, 438240, 438250, 257310, 257528, H01G 406

Patent

active

058597603

ABSTRACT:
A microelectronic capacitor is formed by nitrating the surface of a conducting electrode on a microelectronic substrate. The nitrated surface of the conductive electrode is then oxidized. The nitrating and oxidizing steps collectively form a film of silicon oxynitride on the conductive electrode. A tantalum pentoxide film is then formed on the oxidized and nitrated surface of the conductive electrode. The tantalum pentoxide film may then be thermally treated in the presence of oxygen gas. High performance microelectronic capacitors are thereby provided.

REFERENCES:
patent: 4621277 (1986-11-01), Ito et al.
patent: 5330931 (1994-07-01), Emesh et al.
patent: 5394000 (1995-02-01), Ellul et al.
patent: 5452178 (1995-09-01), Emesh et al.
patent: 5554870 (1996-09-01), Fitch et al.
patent: 5569619 (1996-10-01), Roh

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