Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2007-09-04
2007-09-04
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S381000, C438S719000, C438S139000, C257S277000, C257S531000, C257SE21022
Reexamination Certificate
active
11239783
ABSTRACT:
According to one aspect of the present invention, a method is provided for forming a microelectronic assembly. The method comprises forming first and second trenches on a semiconductor substrate, filling the first and second trenches with an etch stop material, forming an inductor on the semiconductor substrate, forming an etch hole in at least one of the etch stop layer and the semiconductor substrate to expose the substrate between the first and second trenches, isotropically etching the substrate between the first and second trenches through the etch hole to create a cavity within the substrate, and forming a sealing layer over the etch hole to seal the cavity.
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Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz
Maldonado Julio J.
Smith Matthew
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