Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Reexamination Certificate
2008-04-15
2008-04-15
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
C438S048000, C438S622000, C438S662000, C257S414000
Reexamination Certificate
active
11022457
ABSTRACT:
A MEMS microphone is formed on a single substrate that also includes microelectronic circuitry. High-temperature tolerance metals are used to form contacts in a metallization step before performing deep reactive ion etching and back patterning steps to form a MEMS microphone. High-temperature tolerant metals such as titanium, tungsten, chromium, etc. can be used for the contacts. Another approach uses laser annealing in place of deep reactive ion etching so that high-temperature tolerant metals do not need to be used in earlier metallization steps. Different orderings for device, circuit, and metallization series of steps are presented.
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patent: 2004/0146810 (2004-07-01), Gabriel et al.
patent: 2006/0157841 (2006-07-01), Minervini
Allen, Roger, MEMS Microphone-Amp Chip Breaks Acoustics Ground; Electronic Design; Jun. 9, 2003; pp. 1-2.
Signal Systems Corporation; About Signal Systems Corporation; pp. 1-4; www.signalsystemscorp.com.
Araki Shinichi
Kuhn Martin
Kulas Charles J.
Perkins Pamela E
Smith Zandra V.
Sony Corporation
Sony Electronics Inc.
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