Microcontroller memory cell current reading method

Details Microcontroller memory cell current reading method Microcontroller memory cell current reading method

1994-06-27

1996-02-13

Nguyen, Viet Q.

Static information storage and retrieval

Read/write circuit

Plural use of terminal

365201, 365191, 365210, 36518907, G11C 1606

Patent

active

054916623

ABSTRACT:
A method is provided for directly reading the current of cells of a memory forming part of a microcontroller by performing a write operation of the cells and using the existing cell programming logic. For this purpose, the programming voltage supply line is supplied with a low voltage (e.g., 1 V); the word line of the cell for reading is enabled; and a write instruction of a data item having a predetermined logic level (e.g., zero) is performed at the bit corresponding to the cell for reading. By providing an additional pass transistor connected to each reference bit line (RBL) and an additional reference cell enabling line (REF-EN), the reference cells may also be read directly.

REFERENCES:
patent: 4958324 (1990-09-01), Devin
patent: 5181205 (1993-01-01), Kertis
patent: 5291448 (1994-03-01), Conan
patent: 5331594 (1994-07-01), Hotta
patent: 5355341 (1994-10-01), Gaultier et al.
IEICE Transactions, vol. E75-C, No. 4, Apr. 1992, Tokyo, Japan, pp. 472-479, Kuo, et al., "A 512Kb Flash EEPROM Embedded In A 32-b Microcontroller".
1991 Symposium On VLSI Circuits, Digest of Technical Papers, May 1991, Oiso, Japan, pp. 87-88, Kuo, et al., "A 512Kb Flash Eeprom For A 32 bit Microcomputer".

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