Micro structure with interlock configuration

Details Micro structure with interlock configuration Micro structure with interlock configuration

2005-10-12

2009-02-17

Luu, Chuong A. (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257S050000, C257S052000, C257S774000

Reexamination Certificate

active

07492020

ABSTRACT:
A micro structure has: a semiconductor substrate; an insulating film having a via hole and formed on the semiconductor substrate; an interlock structure formed on a side wall of the via hole and having a retracted portion and a protruded portion above the retracted portion; a conductive member having at one end a connection portion formed burying the via hole and an extension portion continuous with the connection portion and extending along a direction parallel to a surface of the semiconductor substrate.

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patent: WO-03/015183 (2003-02-01), None
Biebl, M., et al.; “In Situ Phosphorus-Doped Polysilicon for Integrated MEMS”; The 8th International Conference on Solid-State Sensors and Actuators, and Eurosensors IX; Stockholm, Sweden; Jun. 25-29, 1995; pp. 196-201.
Esasi, Masayosi,; “Micro Machine”; Industrial Technology Information Service Center Ltd., pp. 55-56.

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