Micro metal-wiring structure having stress induced migration res

Details Micro metal-wiring structure having stress induced migration res Micro metal-wiring structure having stress induced migration res

1994-12-02

1995-09-05

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257758, 257759, 257765, 257771, H01L 2348, H01L 2946, H01L 2954

Patent

active

054481139

ABSTRACT:
A micro metal-wiring construction comprises a substrate having a first insulating layer thereon, a metal wiring formed on the first insulating layer of the substrate, and a second insulating layer covering the metal wiring. The coefficient of thermal expansion of the metal wiring is greater than those of the first and the second insulating layers. Intersection lines formed between grain boundaries of the metal wiring and a surface of the first insulating layer is nearly perpendicular to an extending direction of the metal wiring and an angle between grain boundary planes and a line that is perpendicular to a surface of the first insulating layer is greater than 20 degrees. Metal-wiring having a good resistance against stress-induced-migration is obtained by providing when this angle is greater than 20.degree..

REFERENCES:
patent: 4438450 (1984-03-01), Sheng et al.
patent: 4989064 (1991-01-01), Kubokoya et al.
patent: 5018001 (1991-05-01), Kondo et al.
patent: 5019891 (1991-05-01), Onki et al.
patent: 5187561 (1993-02-01), Hasunuma et al.
Applied Physics Letters, vol. 60, No. 18, May 4, 1992, pp. 2219-2221, H. Longworth, et al., "Experimental Study of Electromigration in Bicrystal Aluminum Lines".
Japanese Vacuum Science Technology, B(8), Nov./Dec. 1990, pp. 1232-1238, Y. Koubuchi, et al., "Stress Migration Resistance and Contact Characterization Of Al-Pd-Si Interconnects for Very Large Scale Integrations".
Japanese Metal Society Report, vol. 28, No. 1, 1989, pp. 40-47.

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