Micro-machined semiconductor package

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip

Reexamination Certificate

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Details

C257S678000, C257S737000, C438S125000

Reexamination Certificate

active

06965168

ABSTRACT:
A hermetic multi-layered ceramic semiconductor package for micro-machined semiconductor devices. The package has a substrate with top and bottom surfaces. A micro-machined semiconductor device is located adjacent to the top surface. Vias extend through the substrate between the surfaces. The micro-machined semiconductor device is electrically connected to the vias. A rigid support is located between the micro-machined semiconductor device and the top surface to support the micro-machined semiconductor device during assembly and to space the micro-machined semiconductor device from the top surface. Solder spheres are mounted to the bottom surface and are connected to the vias.

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patent: WO98/19349 (1997-08-01), None

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